050-7209 rev a 8-2010 maximum ratings all ratings per die: t c = 25c unless otherwise speci ? ed . caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. static electrical characteristics ultra low r ds(on) low miller capacitance ultra low gate charge, q g avalanche energy rated extreme dv / dt rated super junction mosfet c power semiconductors o o l mos "coolmos? comprise a new family of transistors developed by in? neon technologies ag. "coolmos" is a trade- mark of in? neon technologies ag." g d s microsemi website - http://www.microsemi.com APT30N60BC6 apt30n60sc6 600v 30a .125 symbol parameter apt30n60b_sc6 unit v dss drain-source voltage 600 volts i d continuous drain current @ t c = 25c 30 amps continuous drain current @ t c = 100c 19 i dm pulsed drain current 1 89 v gs total power dissipation @ t c = 25c 20 volts p d gate-source voltage continuous 219 watts t j ,t stg operating and storage junction temperature range - 55 to 150 c t l lead temperature: 0.063" from case for 10 sec. 260 dv / dt drain-source voltage slope (v ds = 480v, i d = 30a, t j = 125c) 15 v/ns i ar avalanche current 2 5.2 amps e ar repetitive avalanche energy 2 ( id = 5.2a, vdd = 50v ) 0.96 mj e as single pulse avalanche energy ( id = 5.2a, vdd = 50v ) 636 symbol characteristic / test conditions min typ max unit bv (dss) drain-source breakdown voltage (v gs = 0v, i d = 250 a) 600 volts r ds(on) drain-source on-state resistance 3 (v gs = 10v, i d = 14.5a) 0.11 0.125 ohms i dss zero gate voltage drain current (v ds = 600v, v gs = 0v) 25 a zero gate voltage drain current (v ds = 600v, v gs = 0v, t c = 150c) 100 i gss gate-source leakage current (v gs = 20v, v ds = 0v) 100 na v gs(th) gate threshold voltage (v ds = v gs , i d = 960 a) 2.5 3 3.5 volts to-247 d 3 pak downloaded from: http:///
050-7209 rev a 8-2010 dynamic characteristics apt30n60b_sc6 source-drain diode ratings and characteristics thermal characteristics 1 repetitive rating: pulse width limited by maximum junction temperature 2 repetitive avalanche causes additional power losses that can be calculated as p av = e ar *f . pulse width tp limited by tj max. 3 pulse test: pulse width < 380 s, duty cycle < 2% microsemi reserves the right to change, without notice, the speci? cations and information contained herein. 4 see mil-std-750 method 3471 5 eon includes diode reverse recovery. 6 maximum 125c diode commutation speed = di/dt 600a/ s 0 0.10 0.20 0.30 0.40 0.50 0.60 10 -5 10 -4 10 -3 10 -2 0.1 1 10 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v v ds = 25v f = 1 mhz 2267 pf c oss output capacitance 1990 c rss reverse transfer capacitance 203 q g total gate charge 4 v gs = 10v v dd = 300v i d = 30a @ 25c 88 nc q gs gate-source charge 12 q gd gate-drain ("miller ") charge 46 t d(on) turn-on delay time inductive switching v gs = 15v v dd = 400v i d = 30a @ 25c r g = 4.3 9 ns t r rise time 17 t d(off) turn-off delay time 74 t f fall time 48 e on turn-on switching energy 5 inductive switching @ 25c v dd = 400v, v gs = 15v i d = 30a, r g = 4.3 409 j e off turn-off switching energy 224 e on turn-on switching energy 5 inductive switching @ 125c v dd = 400v, v gs = 15v i d = 30a, r g = 4.3 649 e off turn-off switching energy 282 symbol characteristic / test conditions min typ max unit i s continuous source current (body diode) 26 amps i sm pulsed source current 1 (body diode) 65 v sd diode forward voltage 3 (v gs = 0v, i s = -30a) 1.30 volts dv / dt peak diode recovery dv / dt 6 15 v/ns t rr reverse recovery time (i s = -30a, di / dt = 100a/ s) t j = 25c 661 ns t j = 125c 813 q rr reverse recovery charge(i s = -30a, di / dt = 100a/ s) t j = 25c 15 c t j = 125c 18 i rrm peak recovery current(i s = -30a, di / dt = 100a/ s) t j = 25c 46 amps t j = 125c 48 symbol characteristic min typ max unit r jc junction to case 0.52 c/w r ja junction to ambient 31 downloaded from: http:///
050-7209 rev a 8-2010 typical performance curves apt30n60b_sc6 0.60 0.70 0.80 0.90 1.00 1.10 1.20 -50 0 50 100 150 0 .85 0 .90 0 .95 .00 .05 .10 .15 .20 -50 0 50 100 150 0.50 1.00 1.50 2.00 2.50 3.00 0 20 40 60 80 100 0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 0 2 4 6 8 10 12 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 15v v gs = 20v t j = 25c t j = -55c v ds , drain-to-source voltage (v) figure 2, low voltage output characteristics i c , drain current (a) t j = 125c v gs , gate-to-source voltage (v) figure 3, transfer characteristics i d , drain current (a) t c , case temperature (c) figure 5, maximum drain current vs case temperature i d , drain current (a) i d, drain current (a) figure 4, r ds (on) vs drain current i dr , reverse t j , junction temperature (c) figure 6, breakdown voltage vs temperature bv dss , drain-to-source breakdown voltage (normalized) t c , case temperature (c) figure 8, threshold voltage vs temperature v gs (th), threshold voltage (normalized) 0.50 1.00 1.50 2.00 2.50 3.00 - 50 0 50 100 150 t j , junction temperature (c) figure 7, on-resistance vs temperature r ds(on) , drain-to-source on resistance (normalized) 4.5v 6.5v 10v v gs = 10v v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle normalized to v gs = 10v @ 15a i d , drain current (a) v ds , drain-to-source voltage (v) figure 9, maximum safe operating area 1 10 100 200 1 10 100 800 1ms 100ms 100s 10ms 10s 5.0v 5.5v 6.0v 7.0v downloaded from: http:///
050-7209 rev a 8-2010 typical performance curves apt30n60b_sc6 200 400 600 800 1000 1200 5 15 25 35 45 55 0 0 0 0 0 5 15 25 35 45 1 10 100 200 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 20 40 60 80 100 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 0 10 100 1,000 10,000 0 10 20 30 40 50 c iss t j = =25c v ds = 480v v ds , drain-to-source voltage (v) figure 10, capacitance vs drain-to-source voltage c, capacitance (pf) v ds = 300v q g , total gate charge (nc) figure 11, gate charges vs gate-to-source voltage v gs , gate-to-source voltage (volts) i d (a) figure 13, delay times vs current t d(on) and t d(off) (ns) v sd, source-to-drain voltage (v) figure 12, source-drain diode forward voltage i dr , reverse drain current (a) i d (a) figure 14 , rise and fall times vs current t r , and t f (ns) r g , gate resistance (ohms) figure 16, switching energy vs gate resistance switching energy (uj) 0 200 400 600 800 1000 1200 5 10 15 20 25 30 35 40 45 i d (a) figure 15, switching energy vs current switching energy ( j) c oss c rss t j = +150c i d = 30a v dd = 400v r g = 4.3 t j = 125c l = 100 h t d(on) t d(off) v dd = 400v r g = 4.3 t j = 125c l = 100 h e on includes diode reverse recovery. e on e off v dd = 400v r g = 4.3 t j = 125c l = 100 h t r t f e on e off v dd = 400v i d = 30a t j = 125c l = 100 h e on includes diode reverse recovery. v ds = 120v downloaded from: http:///
i c d.u.t. apt30df60 v ce figure 20, inductive switching test circuit v dd g figure 19, inductive switching test circuit figure 17, turn-on switching waveforms and de? nitions figure 18, turn-off switching waveforms and de? nitions t j = 125c collector current collector voltage gate voltage 5% 10% t d(on) 90% 10% t r 5% switching energy t j = 125c collector voltage collector current gate voltage switching energy 0 t d(off) 10% t f 90% typical performance curves apt30n60b_sc6 050-7209 rev a 8-2010 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc{2 plcs.} 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain)and leads are plated 3.81 (.150)4.06 (.160) (base of lead) drain(heat sink) 1.98 (.078)2.08 (.082) gate drain source 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453)11.61 (.457) 13.41 (.528)13.51(.532) revised8/29/97 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) revised 4/18/95 to - 247 package outline d 3 pak package outline e3 100% sn downloaded from: http:///
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